Electrical Properties of Plasma Deposited Thin Films
نویسندگان
چکیده
Abstract. It is well known that MIM (metal-insulator-metal) structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction). Thin films prepared using PECVD (plasma-enhanced chemical vapour deposition)exhibited Pool-Frenkel conductivity (Schottky conductivity) at lower voltages and Fowler-Nordheim tunneling at higher voltages. This behavior is indicated by a linear dependence of lnI on U1/2 or lnI on 1/U , where I is the current and U is the applied voltage.
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تاریخ انتشار 2005